Buffered-layer memory cell

ABSTRACT

A method is provided for forming a buffered-layer memory cell. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode; forming a memory-stable semiconductor buffer layer, typically a metal oxide, overlying the memory film; and, forming a top electrode overlying the semiconductor buffer layer. In some aspects of the method the semiconductor buffer layer is formed from YBa 2 Cu 3 O 7-X  (YBCO), indium oxide (In 2 O 3 ), or ruthenium oxide (RuO 2 ), having a thickness in the range of 10 to 200 nanometers (nm). The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be a Pr 1-X Ca X MnO 3  (PCMO) memory film, where x is in the region between 0.1 and 0.6, with a thickness in the range of 10 to 200 nm.

RELATED APPLICATIONS

This application is a continuation-in-part of a pending patentapplication entitled, ASYMMETRIC-AREA MEMORY CELL, invented by Hsu etal., Ser. No. 10/655,700, filed Sep. 5, 2003, attorney docket no.SLA819.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention generally relates to a thin film resistance memorydevice, for non-volatile memory arrays, and more particularly, to abipolar programmable memory cell having a buffer layer adjacent anelectrode.

2. Description of the Related Art

State of the art resistor random access memories (RRAMs) are often madefrom a colossal magnetoresistance (CMR) memory film and, more typically,from a Pro_(0.7)Ca_(0.3)MnO₃ (PCMO) type of CMR material. The CMRmaterial can be said to have a non-volatile nature, as the resistance ofthe CMR material remains constant under most circumstances. However,when a high electric field induces current flow through the CMRmaterial, a change in the CMR resistance can result. During narrow-pulseprogramming, the resistivity of the memory resistor near an electrodechanges. Experimental data shows that the resistivity of the CMRmaterial near the cathode increases while that at the anode decreases.During the erase process the pulse polarity is reversed. That is, thedesignation of cathode and anode are reversed. Then, the

FIG. 1 is a diagram of a symmetrical CMR film memory cell (prior art).The device is called symmetric because it has a uniform area along anycross-section of the CMR film thickness. The memory cell can be writtento high-resistance state using either positive or negative narrow pulse,and reset to low-resistance state using a long-width electrical pulse.Other memory cells (not shown) may be written to high-resistance stateand erased to low-resistance state using a narrow negative pulse and anarrow positive pulse, respectively. A memory device that is responsiveto only one type of programming, either bipolar or uni-polar, has anecessarily limited usefulness, and is dependent upon systemspecifications and available power supplies.

Thus, some systems are designed for bipolar programming, whereas othersare designed for uni-polar programming, depending upon the type of CMRmemory cell being used. This uncertainty in the design of the memorycells necessarily increases production costs. Some CMR film memory celldesigns are made bipolar programmable by manipulating the composition ofthe film along the thickness of the RRAM resistor. As the memory cellsize is reduced, the thickness of the memory resistor thin film is alsoreduced. However, the CMR film composition can be a difficult variableto control.

It would be advantageous if a CMR memory cell could be programmed usingbipolar, as well as uni-polar pulses.

It would be advantageous if a process for fabricating a CMR memory cell,responsive to either bipolar or uni-polar programming, could be madescalable for processes using increasing smaller feature sizes.

SUMMARY OF THE INVENTION

The present invention provides a CMR memory device structure that can bereliably programmed using a bipolar pulse programming process.Alternately, the device can be programmed using a uni-polar pulseprogramming process. The flexibility in programming is a result of thedevice's unique buffered-layer design.

Accordingly, a method is provided for forming a buffered-layer memorycell. The method comprises: forming a bottom electrode; forming acolossal magnetoresistance (CMR) memory film overlying the bottomelectrode; forming a memory-stable semiconductor buffer layer, typicallya metal oxide, overlying the memory film; and, forming a top electrodeoverlying the semiconductor buffer layer.

In some aspects of the method, the semiconductor buffer layer is formedfrom YBa₂Cu₃O_(7-X) (YBCO), indium oxide (In₂O₃), or ruthenium oxide(RuO₂), having a thickness in the range of 10 to 200 nanometers (nm).The top and bottom electrodes may be TiN/Ti, Pt/TiN/Ti, In/TiN/Ti,PtRhOx compounds, or PtIrOx compounds. The CMR memory film may be aPr_(1-X)Ca_(X)MnO₃ (PCMO) memory film, where x is in the region between0.1 and 0.6, with a thickness in the range of 10 to 200 nm. However,other memory resistor materials are known.

Additional details of the above-described method, a method forprogramming a buffered-layer memory cell using either bipolar oruni-polar pulses, a buffered-layer memory cell device, and abuffered-layer RRAM are provided below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of a symmetrical CMR film memory cell (prior art).

FIG. 2 is a partial cross-sectional view of the present inventionbuffered-layer memory cell.

FIG. 3 is a plan view of the memory device of FIG. 2.

FIG. 4 is a partial cross-sectional view of the present invention RRAMbuffered-layer memory cell.

FIG. 5 is a partial cross-sectional view of a buffered-layer memorycell.

FIG. 6 is a partial cross-sectional view featuring an alternate aspectof the present invention memory cell.

FIG. 7 is a flowchart illustrating the present invention method forforming a buffered-layer memory cell.

FIG. 8 is a flowchart illustrating the present invention method forforming an RRAM buffered-layer memory cell.

FIG. 9 is a flowchart illustrating the present invention method forprogramming a buffered-layer memory cell using bipolar and uni-polarpulses.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 2 is a partial cross-sectional view of the present inventionbuffered-layer memory cell. The memory cell 200 comprises a bottomelectrode (BE) 202 and a CMR memory film 204 overlying the bottomelectrode 202. A memory-stable semiconductor buffer layer 206 overliesthe CMR memory film 204 and a top electrode (TE) 208 overlies thesemiconductor buffer layer 206. Although the buffer layer 206 is shownadjacent the top electrode 208, in other aspects (see FIG. 6), thebuffered layer 206 is adjacent the bottom electrode 202 and the CMRmemory film 204 is adjacent the top electrode 208.

FIG. 3 is a plan view of the memory device 200 of FIG. 2. Consideringboth FIGS. 2 and 3, the top electrode 208 and bottom electrode 202 neednot be asymmetric for the memory device 200 to be bipolar programmable.The programming aspects of the invention are discussed in more detailbelow. Alternately stated, the bottom electrode 202 has an area 300(marked in phantom with dotted lines), where an area is understood to besurface area of the cross-section AA′. The top electrode 208 has an area302 (BB′) approximately equal to the bottom electrode area 300. As usedherein, the word “approximately” means within conventional ICfabrication process tolerances. Symmetric devices are typically easierto fabricate, however, in another aspect (not shown), the memory cell200 may include asymmetric-area electrodes, along with a buffered-layer.Likewise, the CMR film 204 may have an area 304 (CC′) approximatelyequal to the bottom electrode area 300.

Returning to FIG. 2, the semiconductor buffer layer 204 is typicallyformed from a metal oxide material, such as YBa₂Cu₃O_(7-X) (YBCO),indium oxide (In₂O₃), or ruthenium oxide (RuO₂). However, othersemiconductor materials without memory properties, especially othermetal oxides, may possibly be used.

The CMR memory film 204 has a thickness 210 in the range of 10 to 200nanometers (nm). The semiconductor buffer layer 206 has a thickness 212in the range of 10 to 200 nm. The CMR memory film 204 is formed fromPr_(1-X)Ca_(X)MnO₃ (PCMO), where x is in the region between 0.1 and 0.6.However, other materials are also known in the art such as hightemperature super conducting (HTSC), and perovskite metal oxidematerials.

The bottom electrode 202 is formed from a material selected from thegroup such as TiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOxcompounds. Likewise, the top electrode 208 is formed from a materialselected from the group including TiN, TiN/Pt, TiN/In, PtRhOx compounds,or PtIrOx compounds.

FIG. 4 is a partial cross-sectional view of the present invention RRAMbuffered-layer memory cell. The RRAM memory cell 400 comprises a CMOStransistor 402 with source 404 and drain 406 active regions. A metalinterlevel interconnect 408 overlies one of the transistor activeregions. As shown, the interconnect 408 overlies the source 404.However, in other aspects (not shown), the interconnect 408 may overliethe drain 406. A bottom electrode 202 overlies the interlevelinterconnect 408. A CMR memory film 204 overlies the bottom electrode202. A memory-stable semiconductor buffer layer 206 overlies the CMRmemory film 204 and a top electrode 208 overlies the semiconductorbuffer layer 206. Again, it should be understood that the semiconductorbuffer layer may alternately be located adjacent the bottom electrode202 instead of the top electrode 208. Details of the memory cell202/204/206/208 have been explained above in the description of FIGS. 2and 3 and will not be repeated here in the interest of brevity.

Functional Description

The pending patent application entitled, “ASYMMETRIC-AREA MEMORY CELL”,mentioned above in the Related Applications Section, which isincorporated herein by reference, describes a method for fabricatingbipolarity switchable resistance memory resistors. This structure variesthe cross-sectional area of memory material, along the verticaldimension of the resistor. When the thickness of the memory resistor isvery thin, small sized asymmetric-area memory cells can be a challengeto fabricate. The present invention buffered-layer memory cell, however,forms a structure with uniform material cross-sectional areas (asdefined above). Therefore, the memory resistor fabrication process issimple and easily scaled to very small sizes.

It is well understood that a change in resistance occurs only near theelectrode. When the resistivity of the memory resistor material near thecathode increases, the resistance of the resistor material near theanode typically decreases. The high and low-state resistance values aredependent upon the precise thickness of the memory resist material.However, the memory resistor thickness is not a critical factor inmaking the devices switchable. The thickness of the memory resistor maybe very thin. When a non-memory semiconductive buffer layer is addedonto the memory resistor, a non-symmetric memory resistor can beobtained without tailoring the cross-sectional area, or the compositionof the memory resistor material.

FIG. 5 is a partial cross-sectional view of a buffered-layer memorycell. Although the memory resistor in this figure is marked as CMR, anyother material, whose resistance is responsive to an electrical pulse,may be used in this structure. The thickness of the memory resistormaterial and that of the semiconductor metal oxide buffer layer can befrom 10 nm to 200 nm. The non-memory semiconductive buffer layer can bea metal oxide such as YBCO, In₂O₃, or RuO₂. These particular materialsare mentioned because they do not intake additional oxygen when heatedin an oxygen ambient environment.

The upper portion of the memory resistor is made of semiconductive metaloxide, and has no memory properties. Resistance change, as a result ofprogramming, occurs only in the lower portion of the memory resistor. Asa result, this memory resistor can be programmed using either bipolar oruni-polar pulses. A narrow positive pulse applied to the top electrodeincreases the resistance of the resistor. A narrow negative pulseapplied to the top electrode decreases the resistance of the resistor.The resistance may also be reduced by applying a wide width pulse,either positive or negative, to the top electrode (TE). The oxygencontent of the upper layer semiconductive metal oxide does not change.Therefore, the oxygen content in the memory resistor remains constantafter any heat treatment, and can sustain operation-induced heat withoutdegradation of the memory properties, if the memory resistor isprotected with a oxygen diffusion barrier material, between itself andthe adjacent electrode.

FIG. 6 is a partial cross-sectional view featuring an alternate aspectof the present invention memory cell. Although the bufferedsemiconductive metal oxide layer is shown between the memory resistorand the top electrode in FIGS. 2 and 5, it may also be placed betweenthe bottom electrode and the memory resistor, as seen in FIG. 6. In thiscase the above-mentioned programming pulse polarities are reversed.

FIG. 7 is a flowchart illustrating the present invention method forforming a buffered-layer memory cell. Although the method is depicted asa sequence of numbered steps for clarity, no order should be inferredfrom the numbering unless explicitly stated. It should be understoodthat some of these steps may be skipped, performed in parallel, orperformed without the requirement of maintaining a strict order ofsequence. The method starts at Step 700.

Step 702 forms a bottom electrode. Step 704 forms a colossalmagnetoresistance (CMR) memory film overlying the bottom electrode. Step706 forms a memory-stable semiconductor buffer layer overlying thememory film, typically of a metal oxide material. Other non-memoryproperty semiconductor materials may also be used in place of asemiconductor metal oxide. Step 708 forms a top electrode overlying thesemiconductor buffer layer.

In some aspects of the method, Step 706 forms the semiconductor bufferlayer from a material such as YBa₂Cu₃O_(7-X) (YBCO), indium oxide(In₂O₃), or ruthenium oxide (RuO₂), having a thickness in the range of10 to 200 nm.

In other aspects, forming a bottom electrode in Step 702 includesforming an electrode from a material selected from the group includingTiN/Ti, Pt/TiN/Ti, In/TiN/Ti, PtRhOx compounds, or PtIrOx compounds.Likewise, Step 708 forms a top electrode from a material selected fromthe group including TiN, TiN/Pt, TiN/In, PtRhOx compounds, and PtIrOxcompounds.

In one aspect, forming a CMR memory film overlying the bottom electrodein Step 704 includes forming a Pr_(1-X)Ca_(X)MnO₃ (PCMO) memory film,where x is in the region between 0.1 and 0.6, with a thickness in therange of 10 to 200 nm. However, other memory resistor materials are wellknown in the art.

In another aspect, forming a bottom electrode in Step 702 includesforming a bottom electrode with an area, and forming a top electrode inStep 708 includes forming a top electrode with an area approximatelyequal to the bottom electrode area. Likewise, forming a CMR film in Step704 may include forming a CMR film with an area approximately equal tothe bottom electrode area. Alternately stated, the memory cell has asymmetrical structure.

FIG. 8 is a flowchart illustrating the present invention method forforming an RRAM buffered-layer memory cell. The method starts at Step800. Step 802 forms a CMOS transistor with source and drain activeregions. Step 804 forms a metal interlevel interconnect to a transistoractive region (either the source or drain). Step 806 forms a bottomelectrode overlying the interlevel interconnect. Step 808 forms a CMRmemory film overlying the bottom electrode. Step 810 forms amemory-stable semiconductor buffer layer overlying the memory film. Step812 forms a top electrode overlying the semiconductor buffer layer.

FIG. 9 is a flowchart illustrating the present invention method forprogramming a buffered-layer memory cell using bipolar and uni-polarpulses. The method starts at Step 900. Step 902 applies a first voltagepulse with a first polarity to a memory cell top electrode. Step 904, inresponse to the first pulse, creates a low resistance in a CMR memoryfilm, buffered from the top electrode by a memory-stable semiconductorregion. Step 906 applies a second voltage pulse with a second polarity,opposite of the first polarity, to the memory cell top electrode. Step908, in response to the second pulse, creates a high resistance in theCMR memory film. Step 910 applies a third pulse, having a polarityselected from the group including the first and second polarities, and apulse width of greater than 5 microseconds. Step 912, in response to thethird pulse, creates a low resistance in the CMR memory film.

In some aspects, creating a low resistance in the CMR memory film inresponse to the first pulse (Step 904 and/or Step 912) includes creatinga resistance in the range of 1000 to 10k ohms. Creating a highresistance in the CMR memory film in response to the second pulse (Step908) includes creating a resistance in the range of 100k to 10M ohms.These resistances are, at least partially, dependent upon the thicknessof the CMR film. Other resistance ranges may be obtained by changing theCMR film thickness, or by using different memory resistor materials.

In another aspect, applying a first pulse with a first polarity to thememory cell top electrode (Step 902) includes applying a voltage pulsewith a width in the range of 5 to 500 nanoseconds (ns). Likewise,applying a second pulse with a second polarity to the memory cell topelectrode (Step 906) includes applying a voltage pulse with a width inthe range of 5 to 500 ns.

In a different aspect, where the CMR film has a thickness in the rangeof 10 to 200 nanometers, Step 902 applies a pulse with a voltageamplitude in the range of 2 to 6 volts. Likewise, applying a secondpulse with a second polarity to the memory cell top electrode (Step 906)includes applying a pulse with a voltage amplitude in the range of 2 to6 volts.

The above-mentioned programming voltages are referenced to a memory cellstructure where the buffered-layer is adjacent the top electrode, andthe programming pulses are applied to the top electrode. The programmingpulse voltages are revered if either the buffered-area is placedadjacent to the bottom electrode, or the programming voltages areapplied to the bottom electrode.

A buffered-layer memory cell, a corresponding RRAM structure,programming procedure, and fabrication process have been presented.Specific details, such as widths, thicknesses, and materials have beenused to illustrate the invention. However, the invention is not limitedto merely these examples. Other variations and embodiments of theinvention will occur to those skilled in the art.

1. A method for forming a buffered-layer memory cell, the methodcomprising: forming a bottom electrode; forming a colossalmagnetoresistance (CMR) memory film overlying the bottom electrode;forming a YBa₂Cu₃O_(7-X) (YBCO) buffer layer overlying the memory film;and, forming a top electrode overlying the YBCO layer.
 2. The method ofclaim 1 wherein forming a bottom electrode includes forming an electrodefrom a material selected from the group including TiN/Ti, Pt/TiN/Ti,In/TiN/Ti, PtRhOx compounds, and PtIrOx compounds; and, wherein forminga top electrode includes forming an electrode from a material selectedfrom the group including TiN, TiN/Pt, TiN/In, PtRhOx compounds, andPtIrOx compounds.
 3. The method of claim 1 wherein forming a CMR memoryfilm overlying the bottom electrode includes forming aPr_(1-X)Ca_(X)MnO₃ (PCMO) memory film, where x is in the region between0.1 and 0.6.
 4. The method of claim 1 wherein forming the CMR memoryfilm includes forming a CMR memory film with a thickness in the range of10 to 200 nm.
 5. A method for forming a buffered-layer memory cell, themethod comprising: forming a bottom electrode; forming a colossalmagnetoresistance (CMR) memory film overlying the bottom electrode;forming a indium oxide (In₂O₃) buffer layer overlying the memory film;and, forming a top electrode overlying the In₂O₃ layer.
 6. The method ofclaim 5 wherein forming a bottom electrode includes forming an electrodefrom a material selected from the group including TiN/Ti, Pt/TiN/Ti,In/TiN/Ti, PtRhOx compounds, and PtIrOx compounds; and, wherein forminga top electrode includes forming an electrode from a material selectedfrom the group including TiN, TiN/Pt, TiN/In, PtRhOx compounds, andPtIrOx compounds.
 7. The method of claim 5 wherein forming a CMR memoryfilm overlying the bottom electrode includes forming aPr_(1-X)Ca_(X)MnO₃ (PCMO) memory film, where x is in the region between0.1 and 0.6.
 8. The method of claim 5 wherein forming the CMR memoryfilm includes forming a CMR memory film with a thickness in the range of10 to 200 nm.
 9. A method for forming a buffered-layer memory cell, themethod comprising: forming a bottom electrode; forming a colossalmagnetoresistance (CMR) memory film overlying the bottom electrode;forming a ruthenium oxide (RuO₂) buffer layer overlying the memory film;and, forming a top electrode overlying the RuO₂ layer.
 10. The method ofclaim 9 wherein forming a bottom electrode includes forming an electrodefrom a material selected from the group including TiN/Ti, Pt/TiN/Ti,In/TiN/Ti, PtRhOx compounds, and PtIrOx compounds; and, wherein forminga top electrode includes forming an electrode from a material selectedfrom the group including TiN, TiN/Pt, TiN/In, PtRhOx compounds, andPtIrOx compounds.
 11. The method of claim 9 wherein forming a CMR memoryfilm overlying the bottom electrode includes forming aPr_(1-X)Ca_(X)MnO₃ (PCMO) memory film, where x is in the region between0.1 and 0.6.
 12. The method of claim 9 wherein forming the CMR memoryfilm includes forming a CMR memory film with a thickness in the range of10 to 200 nm.